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SPP24N60C3XKSA1

SPP24N60C3XKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

N沟道 650V 24.3A

Feature

• New revolutionary high voltage technology

• Worldwide best RDSon in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance


得捷:
MOSFET N-CH 650V 24.3A TO220-3


欧时:
INFINEON MOSFET SPP24N60C3XKSA1


立创商城:
N沟道 650V 24.3A


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; SPP24N60C3XKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 240000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.


Verical:
Trans MOSFET N-CH 650V 24.3A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 650V 24.3A TO-220


SPP24N60C3XKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 240 W

漏源极电压Vds 650 V

连续漏极电流Ids 24.3A

上升时间 21 ns

输入电容Ciss 3000pF @25VVds

额定功率Max 240 W

下降时间 14 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 240W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

SPP24N60C3XKSA1引脚图与封装图
暂无图片
在线购买SPP24N60C3XKSA1
型号 制造商 描述 购买
SPP24N60C3XKSA1 Infineon 英飞凌 N沟道 650V 24.3A 搜索库存
替代型号SPP24N60C3XKSA1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SPP24N60C3XKSA1

品牌: Infineon 英飞凌

封装: TO-220-3 N-CH 650V 24.3A

当前型号

N沟道 650V 24.3A

当前型号

型号: SPP24N60C3HKSA1

品牌: 英飞凌

封装: TO-220-3 N-CH 650V 24.3A

类似代替

Infineon CoolMOS C3 系列 Si N沟道 MOSFET SPP24N60C3HKSA1, 24.3 A, Vds=650 V, 3引脚 TO-220封装

SPP24N60C3XKSA1和SPP24N60C3HKSA1的区别