SI1029X-T1-GE3

VISHAY  SI1029X-T1-GE3  双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V

The is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset error voltage, low-voltage operation and high-speed circuits.

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Halogen-free

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TrenchFET® power MOSFET

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Very small footprint

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High-side switching

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Low ON-resistance

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±2V Low threshold

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15ns Fast switching speed