SI5997DU-T1-GE3
数据手册.pdfVISHAY SI5997DU-T1-GE3 双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
欧时:
### 双 P 通道 MOSFET,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
艾睿:
Trans MOSFET P-CH 30V 5.1A 8-Pin PowerPAK ChipFET T/R
Allied Electronics:
SI5997DU-T1-GE3 Dual P-channel MOSFET Transistor, 4.1A, 30V, 8-Pin PowerPAK ChipFET
富昌:
Dual P-Channel 30 V 54 mΩ 9.5 nC TrenchFET® Power Mosfet - PowerPAK
Newark:
# VISHAY SI5997DU-T1-GE3 Dual MOSFET, Dual P Channel, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V