SI4922BDY-T1-E3
数据手册.pdfVISHAY SI4922BDY-T1-E3 双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V
The is a dual N-channel MOSFET housed in a surface-mount package.
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- TrenchFET® power MOSFET
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- 100% Rg and UIS tested
e络盟:
VISHAY SI4922BDY-T1-E3 双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V
艾睿:
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
Allied Electronics:
MOSFET; Dual N-Channel 30-V D-S
安富利:
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg and UIS tested * Compliant to RoHS Directive 2002/95/EC
富昌:
双通道 N 沟道 30 V 0.016 Ohm 表面贴装 功率 Mosfet - SOIC-8
Newark:
# VISHAY SI4922BDY-T1-E3 Dual MOSFET, Dual N Channel, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V