SI5902BDC-T1-GE3

VISHAY  SI5902BDC-T1-GE3  双路场效应管, MOSFET, 双N沟道, 4 A, 30 V, 0.053 ohm, 10 V, 3 V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

欧时:
### 双 N 通道 MOSFET，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R

富昌:
双 N沟道 30 V 0.065 Ω 7 nC 表面贴装 Mosfet - ChipFET-1206-8

Verical:
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R

Newark:
# VISHAY  SI5902BDC-T1-GE3  Dual MOSFET, Dual N Channel, 4 A, 30 V, 0.053 ohm, 10 V, 3 V