SI4925BDY-T1-E3

VISHAY  SI4925BDY-T1-E3  场效应管, MOSFET, 双P沟道, -30V, 0.01Ω, -5.3A, SOIC-8, 整卷

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

e络盟:
VISHAY  SI4925BDY-T1-E3  场效应管, MOSFET, 双P沟道

艾睿:
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

安富利:
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

富昌:
双 P 沟道 30 V 0.025 Ohms 表面贴装 功率 Mosfet - SOIC-8

TME:
Transistor: P-MOSFET; unipolar

Verical:
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R

Newark:
# VISHAY  SI4925BDY-T1-E3  Dual MOSFET, Dual P Channel, -5.3 A, -30 V, 0.02 ohm, 10 V, -1 V