SI5513CDC-T1-GE3

N / P沟道 20 V 0.055/0.15 Ω 表面贴装 Mosfet - ChipFET-1206-8

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

欧时:
### 双 N/P 通道 MOSFET，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R

Allied Electronics:
Trans MOSFET N/P-CH 20V 4A/2.4A

安富利:
Trans MOSFET N/P-CH 20V 4A/2.4A 8-Pin Chip FET T/R

富昌:
N / P沟道 20 V 0.055/0.15 Ω 表面贴装 Mosfet - ChipFET-1206-8

Newark:
# VISHAY  SI5513CDC-T1-GE3  Dual MOSFET, N and P Channel, 4 A, 20 V, 0.045 ohm, 4.5 V, 600 mV

儒卓力:
**CMOS 20V 4/-3.7A 55/150mOhm **