SI5429DU-T1-GE3
数据手册.pdfVISHAY SI5429DU-T1-GE3 晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
欧时:
### P 通道 MOSFET,30V 至 80V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
贸泽:
MOSFET -30V Vds 20V Vgs PowerPAK ChipFET
Allied Electronics:
MOSFET P-Ch 30V 11.8A PowerPAK ChipFET8
安富利:
Trans MOSFET P-CH 30V 11.8A 8-Pin PowerPAK ChipFET T/R
Newark:
# VISHAY SI5429DU-T1-GE3 MOSFET Transistor, P Channel, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V