SI2327DS-T1-E3

VISHAY  SI2327DS-T1-E3  晶体管, MOSFET, P沟道, -380 mA, -200 V, 1.96 ohm, -6 V, -4.5 V

The is a 200VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp circuits in DC-to-DC power supplies.

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Ultra-low ON-resistance

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Small size

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-55 to 150°C Operating temperature range

e络盟:
VISHAY  SI2327DS-T1-E3  晶体管, MOSFET, P沟道, -380 mA, -200 V, 1.96 ohm, -6 V, -4.5 V

艾睿:
Trans MOSFET P-CH 200V 0.38A 3-Pin SOT-23 T/R