SIHB30N60E-E3中文资料参数规格
封装参数
安装方式 Surface Mount
封装 TO-252-3
外形尺寸
封装 TO-252-3
其他
Series E
Packaging Tube
Unit-Weight 0.050717 oz
Mounting-Style SMD/SMT
Tradename E Series
Package-Case TO-252-3
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation 250 W
Maximum-Operating-Temperature \+ 150 C
Minimum-Operating-Temperature \- 55 C
Vgs-Gate-Source-Voltage 20 V
Id-Continuous-Drain-Current 29 A
Vds-Drain-Source-Breakdown-Voltage 600 V
Rds-On-Drain-Source-Resistance 125 mOhms
Transistor-Polarity N-Channel
Qg-Gate-Charge 85 nC
Forward-Transconductance-Min 5.4 S
SIHB30N60E-E3引脚图与封装图
暂无图片
在线购买SIHB30N60E-E3
| 型号 | 制造商 | 描述 | 购买 |
|---|---|---|---|
| SIHB30N60E-E3 | Vishay Semiconductor 威世 | Trans MOSFET N-CH 600V 29A 3Pin2+Tab D2PAK | 搜索库存 |