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SIE808DF-T1-GE3

SIE808DF-T1-GE3

数据手册.pdf
SIE808DF-T1-GE3中文资料参数规格
封装参数

封装 PolarPAK-10

外形尺寸

封装 PolarPAK-10

其他

Packaging Reel

Part-Aliases SIE808DF-GE3

Mounting-Style SMD/SMT

Package-Case PolarPAK-10

Technology Si

Number-of-Channels 1 Channel

Configuration Single

Transistor-Type 1 N-Channel

Pd-Power-Dissipation 5.2 W

Maximum-Operating-Temperature \+ 150 C

Minimum-Operating-Temperature \- 55 C

Fall-Time 15 ns 10 ns

Rise-Time 215 ns 55 ns

Vgs-Gate-Source-Voltage 20 V

Id-Continuous-Drain-Current 45 A

Vds-Drain-Source-Breakdown-Voltage 20 V

Rds-On-Drain-Source-Resistance 1.6 mOhms

Transistor-Polarity N-Channel

Typical-Turn-Off-Delay-Time 50 ns 55 ns

Typical-Turn-On-Delay-Time 180 ns 25 ns

Channel-Mode Enhancement

SIE808DF-T1-GE3引脚图与封装图
暂无图片
在线购买SIE808DF-T1-GE3
型号 制造商 描述 购买
SIE808DF-T1-GE3 Vishay Semiconductor 威世 MOSFET 20V 220A 125W 1.6mohm @ 10V 搜索库存