SIE808DF-T1-GE3中文资料参数规格
封装参数
封装 PolarPAK-10
外形尺寸
封装 PolarPAK-10
其他
Packaging Reel
Part-Aliases SIE808DF-GE3
Mounting-Style SMD/SMT
Package-Case PolarPAK-10
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation 5.2 W
Maximum-Operating-Temperature \+ 150 C
Minimum-Operating-Temperature \- 55 C
Fall-Time 15 ns 10 ns
Rise-Time 215 ns 55 ns
Vgs-Gate-Source-Voltage 20 V
Id-Continuous-Drain-Current 45 A
Vds-Drain-Source-Breakdown-Voltage 20 V
Rds-On-Drain-Source-Resistance 1.6 mOhms
Transistor-Polarity N-Channel
Typical-Turn-Off-Delay-Time 50 ns 55 ns
Typical-Turn-On-Delay-Time 180 ns 25 ns
Channel-Mode Enhancement
SIE808DF-T1-GE3引脚图与封装图
暂无图片
在线购买SIE808DF-T1-GE3
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
SIE808DF-T1-GE3 | Vishay Semiconductor 威世 | MOSFET 20V 220A 125W 1.6mohm @ 10V | 搜索库存 |