SI4408DY-T1-E3
数据手册.pdfMOSFET, Power; N-Ch; VDSS 20V; RDSON 0.0035Ω; ID 14A; SO-8; PD 1.6W; VGS +/-20V; -55
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
贸泽:
MOSFET 20 Volt 21 Amp 3.5W
艾睿:
Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
富昌:
单 N 沟道 20 V 0.0045 Ohms 表面贴装 功率 Mosfet - SOIC-8
Newark:
# VISHAY SI4408DY-T1-E3 MOSFET Transistor, N Channel, 21 A, 20 V, 0.0035 ohm, 10 V, 1 V