SUD50N03-09P-GE3中文资料参数规格
封装参数
安装方式 Surface Mount
封装 TO-252-3
外形尺寸
封装 TO-252-3
其他
Packaging Reel
Unit-Weight 0.050717 oz
Mounting-Style SMD/SMT
Package-Case TO-252-3
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation 7.5 W
Maximum-Operating-Temperature \+ 175 C
Minimum-Operating-Temperature \- 55 C
Vgs-Gate-Source-Voltage 20 V
Id-Continuous-Drain-Current 63 A
Vds-Drain-Source-Breakdown-Voltage 30 V
Rds-On-Drain-Source-Resistance 9.5 mOhms
Transistor-Polarity N-Channel
Qg-Gate-Charge 45 nC
SUD50N03-09P-GE3引脚图与封装图
暂无图片
在线购买SUD50N03-09P-GE3
| 型号 | 制造商 | 描述 | 购买 |
|---|---|---|---|
| SUD50N03-09P-GE3 | Vishay Semiconductor 威世 | MOSFET 30V 63A 65.2W 9.5mohm @ 10V | 搜索库存 |