SI1031X-T1-GE3中文资料参数规格
封装参数
封装 SC-89-3
外形尺寸
封装 SC-89-3
其他
Packaging Reel
Part-Aliases SI1031X-GE3
Unit-Weight 0.001058 oz
Mounting-Style SMD/SMT
Package-Case SC-89-3
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 P-Channel
Pd-Power-Dissipation 300 mW
Maximum-Operating-Temperature \+ 150 C
Minimum-Operating-Temperature \- 55 C
Fall-Time 30 ns
Rise-Time 30 ns
Vgs-Gate-Source-Voltage 6 V
Id-Continuous-Drain-Current 155 mA
Vds-Drain-Source-Breakdown-Voltage \- 20 V
Rds-On-Drain-Source-Resistance 8 Ohms
Transistor-Polarity P-Channel
Typical-Turn-Off-Delay-Time 60 ns
Typical-Turn-On-Delay-Time 55 ns
Channel-Mode Enhancement
SI1031X-T1-GE3引脚图与封装图
暂无图片
在线购买SI1031X-T1-GE3
| 型号 | 制造商 | 描述 | 购买 |
|---|---|---|---|
| SI1031X-T1-GE3 | Vishay Semiconductor 威世 | P通道20 -V (D -S )的MOSFET P-Channel 20-V D-S MOSFET | 搜索库存 |
