SI3465DV-T1-GE3中文资料参数规格
封装参数
安装方式 Surface Mount
封装 TSOP-6
外形尺寸
封装 TSOP-6
其他
Packaging Reel
Part-Aliases SI3465DV-GE3
Unit-Weight 0.000705 oz
Mounting-Style SMD/SMT
Package-Case TSOP-6
Technology Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 P-Channel
Pd-Power-Dissipation 1.14 W
Maximum-Operating-Temperature \+ 150 C
Minimum-Operating-Temperature \- 55 C
Vgs-Gate-Source-Voltage 20 V
Id-Continuous-Drain-Current 3 A
Vds-Drain-Source-Breakdown-Voltage \- 20 V
Rds-On-Drain-Source-Resistance 80 mOhms
Transistor-Polarity P-Channel
SI3465DV-T1-GE3引脚图与封装图
暂无图片
在线购买SI3465DV-T1-GE3
| 型号 | 制造商 | 描述 | 购买 |
|---|---|---|---|
| SI3465DV-T1-GE3 | Vishay Semiconductor 威世 | MOSFET 20V 4A 2W 80mohm @ 10V | 搜索库存 |