SI2366DS-T1-GE3

VISHAY  SI2366DS-T1-GE3  晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, high frequency switching and DC-to-DC converter applications.

.

100% Rg tested

.

-55 to 150°C Operating temperature range

.

Halogen-free

得捷:
MOSFET N-CH 30V 5.8A SOT-23

欧时:
### N 通道 MOSFET，30V 至 50V，Vishay Semiconductor

艾睿:
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R

富昌:
30V, 5.8A, 36MOHM, N-CH, SOT-23

Verical:
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R