SIR662DP-T1-GE3

VISHAY  SIR662DP-T1-GE3  晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V

The is a 60V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification, primary side switch, amusement system, DC/DC converter and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

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Halogen-free according to IEC 61249-2-21 definition

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100% Rg Tested

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100% UIS Tested

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Low Qg for high efficiency