SI4164DY-T1-GE3
数据手册.pdfVISHAY SI4164DY-T1-GE3 场效应管, MOSFET, N通道, 30V, 30A, SOIC, 整卷
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
e络盟:
VISHAY SI4164DY-T1-GE3 MOSFET, N CHANNEL, 30V, 30A, SOIC-8
艾睿:
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
安富利:
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
富昌:
单 N 沟道 30 V 0.0032 Ohm 表面贴装 功率 Mosfet - SOIC-8
Verical:
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
Newark:
# VISHAY SI4164DY-T1-GE3 MOSFET Transistor, N Channel, 30 A, 30 V, 0.0026 ohm, 10 V, 1.2 V