SI3447BDV-T1-E3
数据手册.pdfVISHAY SI3447BDV-T1-E3 晶体管, MOSFET, P沟道, 4.5 A, -12 V, 0.033 ohm, -4.5 V, -1 V
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
艾睿:
Trans MOSFET P-CH 12V 4.5A 6-Pin TSOP T/R
Newark:
# VISHAY SI3447BDV-T1-E3 MOSFET Transistor, P Channel, -4.5 A, -12 V, 0.033 ohm, -1.8 V, -1 V