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SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3

数据手册.pdf

VISHAY  SUP50N03-5M1P-GE3  晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 µohm, 10 V, 1 V

**Features:

* **Halogen-Free Option Available

* Low-Side Switching

* Low On-Resistance: 5 Ω

* Low Threshold: 0.9 V Typ.

* Fast Switching Speed: 35 ns Typ.

* TrenchFET® Power MOSFETs: 1.5 V Rated

* ESD Protected: 2000 V

**Applications:

**

* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers


欧时:
### N 通道 MOSFET,30V 至 50V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor


e络盟:
VISHAY  SUP50N03-5M1P-GE3  晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 µohm, 10 V, 1 V


艾睿:
Trans MOSFET N-CH 30V 50A 3-Pin3+Tab TO-220AB


Allied Electronics:
SUP50N03-5M1P-GE3 N-channel MOSFET Transistor, 50 A, 30 V, 3-Pin TO-220AB


SUP50N03-5M1P-GE3中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.0042 Ω

极性 N-Channel

耗散功率 2.7 W

阈值电压 1 V

漏源极电压Vds 30 V

输入电容Ciss 2780pF @15VVds

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 59.5 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220

外形尺寸

长度 10.51 mm

宽度 4.65 mm

高度 15.49 mm

封装 TO-220

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

SUP50N03-5M1P-GE3引脚图与封装图
暂无图片
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SUP50N03-5M1P-GE3 Vishay Semiconductor 威世 VISHAY  SUP50N03-5M1P-GE3  晶体管, MOSFET, N沟道, 50 A, 30 V, 4200 µohm, 10 V, 1 V 搜索库存