SIHG73N60E-GE3

VISHAY  SIHG73N60E-GE3  场效应管, MOSFET, N沟道, 600V, 73A, TO-247AC-3

The is a 650V N-channel MOSFET with super junction technology to minimize on-resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications.

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100% Avalanche rated

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Low figure of merit Ron X Qg

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Ultra low gate charge