SI7846DP-T1-E3
数据手册.pdfVISHAY SI7846DP-T1-E3 场效应管, MOSFET, N沟道, 150V, 0.041Ω, 4A
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
贸泽:
MOSFET 150V 6.7A 5.2W
艾睿:
Trans MOSFET N-CH 150V 4A 8-Pin PowerPAK SO T/R
富昌:
单 N 沟道 150 V 0.05 Ohms 表面贴装 功率 Mosfet - PowerPAK-SO-8
Verical:
Trans MOSFET N-CH 150V 4A 8-Pin PowerPAK SO T/R
Newark:
# VISHAY SI7846DP-T1-E3 MOSFET Transistor, N Channel, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V