SI2337DS-T1-GE3

VISHAY  SI2337DS-T1-GE3  晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V

The is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.

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Halogen-free

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-50 to 150°C Operating temperature range

e络盟:
VISHAY  SI2337DS-T1-GE3.  场效应管, MOSFET, P沟道, -80V, 2.2A TO-236

艾睿:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

Allied Electronics:
SI2337DS-T1-GE3 P-channel MOSFET Transistor, 1.75 A, 80 V, 3-Pin TO-236

安富利:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

富昌:
-60 V 1.2A 170 mOhm 漏源导通电阻 当10 V时 8.6 nC Qg SOT-23

Verical:
Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2337DS-T1-GE3  MOSFET Transistor, P Channel, -2.2 A, -80 V, 0.216 ohm, -6 V, -4 V

儒卓力:
**P-CH -80V -2,2A 270mOhm SOT-23 **

力源芯城:
P沟道,-80V,-2.2A,D-SMOSFET