SI3493BDV-T1-E3

VISHAY  SI3493BDV-T1-E3  晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, battery switch and PA switch applications.

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PWM optimized

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100% Rg tested

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

安富利:
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

富昌:
单通道 P 沟道 20 V 0.0275 Ohm 表面贴装 功率 Mosfet - TSOP-6

Verical:
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

Newark:
# VISHAY  SI3493BDV-T1-E3  MOSFET Transistor, P Channel, -8 A, -20 V, 0.0347 ohm, -1.8 V, -400 mV