SI2336DS-T1-GE3

VISHAY  SI2336DS-T1-GE3  晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter and DC-to-DC converter applications.

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100% Rg tested

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-55 to 150°C Operating temperature range

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Halogen-free

贸泽:
MOSFET 30V 107A N-CH MOSFET

艾睿:
Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R

富昌:
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236

Newark:
# VISHAY  SI2336DS-T1-GE3  MOSFET Transistor, N Channel, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV