SI2343DS-T1-E3
数据手册.pdfVISHAY SI2343DS-T1-E3 场效应管, MOSFET, P沟道, -30V, -4A
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
贸泽:
MOSFET 30V 4.0A 1.25W 53 mohms @ 10V
e络盟:
VISHAY SI2343DS-T1-E3 场效应管, MOSFET, P沟道, -30V, 4A, TO-236
艾睿:
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R
富昌:
单 P 沟道 30 V 0.053 Ohms 表面贴装 功率 Mosfet - TO-236 SOT-23
Verical:
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2343DS-T1-E3 MOSFET Transistor, P Channel, -4 A, -30 V, 53 mohm, -10 V, -3 V
力源芯城:
-30V,-4A,P沟道功率MOSFET