SIC772CD-T1-GE3

VISHAY  SIC772CD-T1-GE3  功率级, DrMOS, MOSFET带集成肖特基二极管, 4.5V-24V电源, 40A输出, POWERPAK-40

The is an integrated Power Stage Solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. The internal power MOSFETs utilizes Vishay"s state-of-the-art TrenchFET Gen IV technology that delivers industry bench-mark performance to significantly reduce switching and conduction losses. The SiC772 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control and integrated bootstrap Schottky diode, a thermal warning THWn alerts the system of excessive junction temperature. This driver is also compatible with wide range of PWM controller with the support of tri-state PWM, 5V PWM logic and skip mode SMOD for improve light load efficiency.

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Industry benchmark MOSFET with integrated Schottky diode

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Delivers in excess of 40A continuous current

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86% Peak efficiency at 19 to 1V and 18A

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High frequency operation up to 1.5MHz

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Power MOSFETs optimized for 19V input stage

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5V PWM logic with tri-state and hold-off

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SMOD logic for light load efficiency boost

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Thermal monitor flag

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Compliant with Intel DrMOS 4.0 specification