STPSC606D
数据手册.pdfSTMICROELECTRONICS STPSC606D 二极管, 碳化硅肖特基, SIC, 600V系列, 单, 600 V, 6 A, 6 nC, TO-220AC
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
**Key Features**
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- No or negligible reverse recovery
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- Dedicated to PFC boost diode
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- Switching behavior independent of temperature