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SD2931-11

射频功率晶体管HF / VHF / UHF N沟道MOSFET RF power transistors HF/VHF/UHF N-channel MOSFETs

This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 389000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 230 MHz.

SD2931-11中文资料参数规格
技术参数

频率 175 MHz

额定电流 20 A

耗散功率 389000 mW

输出功率 150 W

增益 15 dB

测试电流 250 mA

输入电容Ciss 480pF @50VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 389000 mW

额定电压 125 V

封装参数

安装方式 Screw

引脚数 4

封装 M-174

外形尺寸

高度 7.11 mm

封装 M-174

其他

产品生命周期 Unknown

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

SD2931-11引脚图与封装图
暂无图片
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