SD1477
数据手册.pdfRF功率双极晶体管VHF移动应用程序 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS
DESCRIPTION
The is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF
FM communications. This device utilizes diffused emitter resistors to withstand extremely high
VSWR under rated operating conditions, and is in ternally input matched to optimize power gain and efficiency over the 136 - 175 MHz band.
FEATURES SUMMARY
■ 175 MHz
■ 12.5 VOLTS
■ COMMON EMITTER
■ POUT= 100 W MIN. WITH 6.0 dB GAIN