STGW19NC60WD
数据手册.pdfSTMICROELECTRONICS STGW19NC60WD 单晶体管, IGBT, 42 A, 2.5 V, 125 W, 600 V, TO-247, 3 引脚
IGBT 分立,STMicroelectronics
得捷:
IGBT 600V 42A 125W TO247
欧时:
STMicroelectronics IGBT, STGW19NC60WD, 3引脚, TO-247封装, Vce=600 V, 23 A, ±20V
贸泽:
IGBT 晶体管 N Ch 600V 19A
e络盟:
STMICROELECTRONICS STGW19NC60WD 单晶体管, IGBT, 42 A, 2.5 V, 125 W, 600 V, TO-247, 3 引脚
艾睿:
Use the STGW19NC60WD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans IGBT Chip N-CH 600V 42A 3-Pin3+Tab TO-247
富昌:
STGW19NC60WD Series 600 V 23 A N-Channel Ultra Fast PowerMESH IGBT - TO-247
Chip1Stop:
Trans IGBT Chip N-CH 600V 42A 3-Pin3+Tab TO-247
DeviceMart:
IGBT N-CH 23A 600V TO-247