STGD10NC60HT4

Trans IGBT Chip N-CH 600V 20A 60000mW 3Pin2+Tab DPAK T/R

Minimize the current at your gate with the IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 60000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.