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STGWT28IH125DF

STGWT28IH125DF

数据手册.pdf

IGBT 晶体管 1250V 25A trench gte field-stop IGBT

The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1250 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.

STGWT28IH125DF中文资料参数规格
技术参数

耗散功率 375 W

击穿电压集电极-发射极 1250 V

额定功率Max 375 W

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 375000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3-3

外形尺寸

封装 TO-3-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

STGWT28IH125DF引脚图与封装图
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