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S29GL128P11FFIV10

S29GL128P11FFIV10

数据手册.pdf
Spansion 飞索半导体 主动器件

SPANSION  S29GL128P11FFIV10  芯片, 闪存, 或非, 128MB, FBGA-64

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase 2.7-3.6 V

■ Enhanced VersatileI/O™ control

   – All input levels address, control, and DQ input levels and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

■ 90 nm MirrorBit process technology

■ 8-word/16-byte page read buffer

■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates

■ Secured Silicon Sector region

   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

   – Can be programmed and locked at the factory or by the customer

■ Uniform 64 Kword/128 Kbyte Sector Architecture

   – S29GL01GP: One thousand twenty-four sectors

   – S29GL512P: Five hundred twelve sectors

   – S29GL256P: Two hundred fifty-six sectors

   – S29GL128P: One hundred twenty-eight sectors

■ 100,000 erase cycles per sector typical

■ 20-year data retention typical

■ Offered Packages

   – 56-pin TSOP

   – 64-ball Fortified BGA

■ Suspend and Resume commands for Program and Erase operations

■ Write operation status bits indicate program and erase operation completion

■ Unlock Bypass Program command to reduce programming time

■ Support for CFI Common Flash Interface

■ Persistent and Password methods of Advanced Sector Protection

■ WP#/ACC input

   – Accelerates programming time when VHH is applied for greater throughput during system production

   – Protects first or last sector regardless of sector protection settings

■ Hardware reset input RESET# resets device

■ Ready/Busy# output RY/BY# detects program or erase cycle completion

S29GL128P11FFIV10中文资料参数规格
技术参数

电源电压DC 2.70V min

针脚数 64

存取时间 110 ns

内存容量 16000000 B

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.7V ~ 3.6V

电源电压Max 3.6 V

电源电压Min 2.7 V

封装参数

引脚数 64

封装 FBGA-64

外形尺寸

封装 FBGA-64

其他

产品生命周期 Active

包装方式 Cut Tape CT

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

香港进出口证 NLR

S29GL128P11FFIV10引脚图与封装图
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在线购买S29GL128P11FFIV10
型号 制造商 描述 购买
S29GL128P11FFIV10 Spansion 飞索半导体 SPANSION  S29GL128P11FFIV10  芯片, 闪存, 或非, 128MB, FBGA-64 搜索库存
替代型号S29GL128P11FFIV10
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: S29GL128P11FFIV10

品牌: Spansion 飞索半导体

封装: Fortified 16000000B 2.7V 64Pin

当前型号

SPANSION  S29GL128P11FFIV10  芯片, 闪存, 或非, 128MB, FBGA-64

当前型号

型号: S29GL128P11FFI010

品牌: 赛普拉斯

封装: BGA-64 16000000B 2.7V

类似代替

S29GL128P 系列 128 Mb 16M x 8 3 V 110 ns 表面贴装 闪存-NOR 存储器 - BGA-64

S29GL128P11FFIV10和S29GL128P11FFI010的区别

型号: S29GL128P10FFI010

品牌: 飞索半导体

封装: FBGA 16000000B 2.7V 64Pin

类似代替

SPANSION  S29GL128P10FFI010  闪存, 128 Mbit, 16M x 8位 / 8M x 16位, CFI, FBGA, 64 引脚

S29GL128P11FFIV10和S29GL128P10FFI010的区别

型号: S29GL128P11FFI020

品牌: 赛普拉斯

封装: Fortified 16000000B 2.7V

功能相似

S29GL128P 系列 128 Mb 16M x 8 3 V 110 ns 闪存-NOR 存储器 - BGA-64

S29GL128P11FFIV10和S29GL128P11FFI020的区别