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S25FL128P0XMFI013

S25FL128P0XMFI013

数据手册.pdf
Spansion 飞索半导体 主动器件

NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1Bit 8ns 16Pin SOIC W T/R

General Description

The S25FL128P is a 3.0 Volt 2.7V to 3.6V, single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.

The device accepts data written to SI Serial Input and outputs data on SO Serial Output. The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.

Distinctive Characteristics

Architectural Advantages

 Single power supply operation

   – Full voltage range: 2.7V to 3.6V read and program operations

 Memory Architecture

   – 128Mb uniform 256 KB sector product

   – 128Mb uniform 64 KB sector product

 Program

   – Page Program up to 256 bytes in 1.5 ms typical

   – Faster program time in Accelerated Programming mode8.5 V–9.5 V on #WP/ACC in 1.2 ms typical

 Erase

   – 2 s typical 256 KB sector erase time

   – 0.5 s typical 64 KB sector erase time

   – 128 s typical bulk erase time

   – Sector erase SE command D8h for 256 KB sectors; 20h or D8h for 64KB sectors

   – Bulk erase command C7h for 256 KB sectors; 60h or C7h for 64KB sectors

 Cycling Endurance

   – 100,000 cycles per sector typical

 Data Retention

   – 20 years typical

 Device ID

   – RDID 9Fh, READ_ID 90h and RES ABh commands to read manufacturer and device ID information

   – RES command one-byte electronic signature for backward compatibility

 Process Technology

   – Manufactured on 0.09 µm MirrorBit® process technology

 Package Option

   – Industry Standard Pinouts

   – 16-pin SO package 300 mils

   – 8-Contact WSON Package 6 x 8 mm

Performance Characteristics

 Speed

   – 104 MHz clock rate maximum

 Power Saving Standby Mode

   – Deep Power Down Mode 3 µA typical

   – Standby Mode 200 µA max

Memory Protection Features

 Memory Protection

   – WP#/ACC pin works in conjunction with Status Register Bits to protect specified memory areas

   – 256 KB uniform sector product:

     Status Register Block Protection bits BP2, BP1, BP0 in status

     register configure parts of memory as read-only.

   – 64KB uniform sector product:

     Status Register Block Protection bits BP3, BP2, BP1, BP0 in

     status register configure parts of memory as read-only

Software Features

– SPI Bus Compatible Serial Interface

Hardware Features

 x8 Parallel Programming Mode for 16-pin SO package only

S25FL128P0XMFI013中文资料参数规格
技术参数

电源电压Max 3.6 V

电源电压Min 2.7 V

封装参数

安装方式 Surface Mount

封装 SO-16

外形尺寸

封装 SO-16

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

海关信息

香港进出口证 NLR

S25FL128P0XMFI013引脚图与封装图
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在线购买S25FL128P0XMFI013
型号 制造商 描述 购买
S25FL128P0XMFI013 Spansion 飞索半导体 NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1Bit 8ns 16Pin SOIC W T/R 搜索库存
替代型号S25FL128P0XMFI013
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: S25FL128P0XMFI013

品牌: Spansion 飞索半导体

封装: SO-16

当前型号

NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1Bit 8ns 16Pin SOIC W T/R

当前型号

型号: S25FL128P0XMFI003

品牌: 飞索半导体

封装: SO-16

完全替代

Flash Memory 128M CMOS 3V/104MHz Serial NOR Flash

S25FL128P0XMFI013和S25FL128P0XMFI003的区别

型号: S25FL128P0XMFI001

品牌: 飞索半导体

封装: SOIC 16000000B 2.7V 16Pin

类似代替

SPANSION  S25FL128P0XMFI001  芯片, 闪存, 128MB, 104MHZ, SOIC-16

S25FL128P0XMFI013和S25FL128P0XMFI001的区别

型号: S25FL128P0XMFI011

品牌: 飞索半导体

封装: SOIC

类似代替

Flash Mem Serial-SPI 3V/3.3V 128M-Bit 128M x 1 8ns 16Pin SOIC W Tube

S25FL128P0XMFI013和S25FL128P0XMFI011的区别