锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

S25FL128P0XNFI011

S25FL128P0XNFI011

数据手册.pdf
Spansion 飞索半导体 主动器件

NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns 8Pin WSON Tube

General Description

The S25FL128P is a 3.0 Volt 2.7V to 3.6V, single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.

The device accepts data written to SI Serial Input and outputs data on SO Serial Output. The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.

Distinctive Characteristics

Architectural Advantages

 Single power supply operation

   – Full voltage range: 2.7V to 3.6V read and program operations

 Memory Architecture

   – 128Mb uniform 256 KB sector product

   – 128Mb uniform 64 KB sector product

 Program

   – Page Program up to 256 bytes in 1.5 ms typical

   – Faster program time in Accelerated Programming mode8.5 V–9.5 V on #WP/ACC in 1.2 ms typical

 Erase

   – 2 s typical 256 KB sector erase time

   – 0.5 s typical 64 KB sector erase time

   – 128 s typical bulk erase time

   – Sector erase SE command D8h for 256 KB sectors; 20h or D8h for 64KB sectors

   – Bulk erase command C7h for 256 KB sectors; 60h or C7h for 64KB sectors

 Cycling Endurance

   – 100,000 cycles per sector typical

 Data Retention

   – 20 years typical

 Device ID

   – RDID 9Fh, READ_ID 90h and RES ABh commands to read manufacturer and device ID information

   – RES command one-byte electronic signature for backward compatibility

 Process Technology

   – Manufactured on 0.09 µm MirrorBit® process technology

 Package Option

   – Industry Standard Pinouts

   – 16-pin SO package 300 mils

   – 8-Contact WSON Package 6 x 8 mm

Performance Characteristics

 Speed

   – 104 MHz clock rate maximum

 Power Saving Standby Mode

   – Deep Power Down Mode 3 µA typical

   – Standby Mode 200 µA max

Memory Protection Features

 Memory Protection

   – WP#/ACC pin works in conjunction with Status Register Bits to protect specified memory areas

   – 256 KB uniform sector product:

     Status Register Block Protection bits BP2, BP1, BP0 in status

     register configure parts of memory as read-only.

   – 64KB uniform sector product:

     Status Register Block Protection bits BP3, BP2, BP1, BP0 in

     status register configure parts of memory as read-only

Software Features

– SPI Bus Compatible Serial Interface

Hardware Features

 x8 Parallel Programming Mode for 16-pin SO package only

S25FL128P0XNFI011中文资料参数规格
技术参数

电源电压 2.7V ~ 3.6V

封装参数

安装方式 Surface Mount

封装 WDFN-8

外形尺寸

封装 WDFN-8

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

S25FL128P0XNFI011引脚图与封装图
暂无图片
在线购买S25FL128P0XNFI011
型号 制造商 描述 购买
S25FL128P0XNFI011 Spansion 飞索半导体 NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns 8Pin WSON Tube 搜索库存
替代型号S25FL128P0XNFI011
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: S25FL128P0XNFI011

品牌: Spansion 飞索半导体

封装: 8-WDFN

当前型号

NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns 8Pin WSON Tube

当前型号

型号: MX25L12835FZ2I-10G

品牌: 旺宏电子

封装: 8-WDFN

类似代替

MX25L 系列 128 Mb x1/x2/x4 3 V 104 MHz 工业 串行 闪存 - WSON-8

S25FL128P0XNFI011和MX25L12835FZ2I-10G的区别

型号: MX25L12845EZNI-10G

品牌: 旺宏电子

封装: 8-WDFN

类似代替

MX25L 系列 3 V 128 Mb 128M x 1 50 MHz 工业级 串行 闪存 - WSON-8

S25FL128P0XNFI011和MX25L12845EZNI-10G的区别

型号: S25FL128P0XNFI001

品牌: 飞索半导体

封装: WSON 16000000B 2.7V 8Pin

功能相似

SPANSION  S25FL128P0XNFI001  芯片, 闪存, 128MB, 104MHZ, WSON-8

S25FL128P0XNFI011和S25FL128P0XNFI001的区别