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SST25VF016B-50-4I-QAF-T

SST25VF016B-50-4I-QAF-T

数据手册.pdf
Microchip(微芯) 主动器件

SST25VF 系列 3.3 V 16 Mb 2M x 8 8ns SPI 串行 闪存 - WSON-8

Product Description

The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Features

• Single Voltage Read and Write Operations

\- 2.7-3.6V

• Serial Interface Architecture

\- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

\- Up to 50 MHz

• Superior Reliability

\- Endurance: 100,000 Cycles typical

\- Greater than 100 years Data Retention

• Low Power Consumption:

\- Active Read Current: 10 mA typical

\- Standby Current: 5 µA typical

• Flexible Erase Capability

\- Uniform 4 KByte sectors

\- Uniform 32 KByte overlay blocks

\- Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:

\- Chip-Erase Time: 35 ms typical

\- Sector-/Block-Erase Time: 18 ms typical

\- Byte-Program Time: 7 µs typical

• Auto Address Increment AAI Programming

\- Decrease total chip programming time over Byte-Program operations

• End-of-Write Detection

\- Software polling the BUSY bit in Status Register

\- Busy Status readout on SO pin in AAI Mode

• Hold Pin HOLD#

\- Suspends a serial sequence to the memory without deselecting the device

• Write Protection WP#

\- Enables/Disables the Lock-Down function of the status register

• Software Write Protection

\- Write protection through Block-Protection bits in status register

• Temperature Range

\- Commercial: 0°C to +70°C

\- Industrial: -40°C to +85°C

• Packages Available

\- 8-lead SOIC 200 mils

\- 8-contact WSON 6mm x 5mm

• All devices are RoHS compliant

SST25VF016B-50-4I-QAF-T中文资料参数规格
技术参数

针脚数 8

时钟频率 50 MHz

位数 8

存取时间Max 8 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.7V ~ 3.6V

电源电压Max 3.6 V

电源电压Min 2.7 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 WSON-8

外形尺寸

封装 WSON-8

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 3A991.b.1.a

SST25VF016B-50-4I-QAF-T引脚图与封装图
SST25VF016B-50-4I-QAF-T引脚图

SST25VF016B-50-4I-QAF-T引脚图

SST25VF016B-50-4I-QAF-T封装图

SST25VF016B-50-4I-QAF-T封装图

SST25VF016B-50-4I-QAF-T封装焊盘图

SST25VF016B-50-4I-QAF-T封装焊盘图

在线购买SST25VF016B-50-4I-QAF-T
型号 制造商 描述 购买
SST25VF016B-50-4I-QAF-T Microchip 微芯 SST25VF 系列 3.3 V 16 Mb 2M x 8 8ns SPI 串行 闪存 - WSON-8 搜索库存
替代型号SST25VF016B-50-4I-QAF-T
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SST25VF016B-50-4I-QAF-T

品牌: Microchip 微芯

封装: WSON

当前型号

SST25VF 系列 3.3 V 16 Mb 2M x 8 8ns SPI 串行 闪存 - WSON-8

当前型号

型号: SST25VF016B-50-4I-QAF

品牌: 微芯

封装: WSON

完全替代

SST25VF016B 串行 SPI SuperFlash® 存储器### 闪存,Microchip

SST25VF016B-50-4I-QAF-T和SST25VF016B-50-4I-QAF的区别