S29GL512S10DHI010
数据手册.pdfSPANSION S29GL512S10DHI010 闪存, 或非, 512 Mbit, 32M x 16位, 并行, FBGA, 64 引脚
GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family
S29GL01GS 1 Gbit 128 Mbyte
S29GL512S 512 Mbit 64 Mbyte
S29GL256S 256 Mbit 32 Mbyte
S29GL128S 128 Mbit 16 Mbyte
CMOS 3.0 Volt Core with Versatile I/O
General Description
The ® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective
programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
65 nm MirrorBit Eclipse Technology
Single supply VCC for read / program / erase 2.7V to 3.6V
Versatile I/O Feature
– Wide I/O voltage range VIO: 1.65V to VCC
x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Sector Erase
– Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection ASP
– Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program OTP array with two lockable regions
Common Flash Interface CFI parameter table
Temperature Range
– Industrial -40°C to +85°C
– In-Cabin -40°C to +105°C
100,000 erase cycles for any sector typical
20-year data retention typical
Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm