RFD3055
数据手册.pdf11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49082.
Features
• 12A, 60V
•rDSON= 0.150Ω
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
\- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”