RJH60D7DPM-00#T1

Trans IGBT Chip N-CH 600V 90A 55000mW 3Pin3+Tab TO-3PFM Tube

This powerful and secure IGBT transistor from Renesas will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 55000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes trench technology. It is made in a single configuration.