RJH60D7DPQ-E0#T2

IGBT 晶体管 IGBT

You won"t need to worry about any lagging in your circuit with this IGBT transistor from Renesas. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.