RJP6085DPK-00#T0

Trans IGBT Chip N-CH 600V 40A 178500mW 3Pin3+Tab TO-3P

This fast-switching IGBT transistor from Renesas will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 178500 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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IGBT 600V 40A 178.5W TO-3P

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Trans IGBT Chip N-CH 600V 40A 3-Pin3+Tab TO-3P

DeviceMart:
IGBT 600V 40A 178.5W TO-3P