RJH60A83RDPE-00#J3

Trans IGBT Chip N-CH 600V 20A 52000mW 3Pin2+Tab LDPAKS-1 T/R

This IGBT transistor from Renesas will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 52000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.