PTFB211503FLV2R0XTMA1
数据手册.pdf
Infineon
英飞凌
主动器件
射频金属氧化物半导体场效应RF MOSFET晶体管
Summary of Features:
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- Broadband internal matching
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- Enhanced for use in DPD error correction systems
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- Typical two-carrier WCDMA performance at 2170 MHz, 30 V,
\- Average output power = 32 W
\- Linear Gain = 18 dB
\- Efficiency = 29%
\- Intermodulation distortion = –34 dBc
\- Adjacent channel power = –37 dBc
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- Typical CW performance, 2170 MHz, 30 V
\- Output power at P1dB = 150 W
\- Efficiency = 55%
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- Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
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- Integrated ESD protection
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- Capable of handling 10:1 VSWR @ 30 V, 150 W CW output power
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- Pb-Free and RoHS compliant
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- Package: H-34288-4/2, earless