PTFA211801EV5R0XTMA1
数据手册.pdf
Infineon
英飞凌
主动器件
High Power RF LDMOS FET, 180W, 28V, 2110 – 2170MHz
Summary of Features:
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- Broadband internal matching
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- Typical two-carrier WCDMA performance at 2140 MHz, 28 V
\- Average output power = 45.5 dBm
\- Linear Gain = 15.5 dB
\- Efficiency = 27.5%
\- Intermodulation distortion = –36 dBc
\- Adjacent channel power = –41 dBc
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- Typical CW performance, 2170 MHz, 30 V
\- Output power at P1dB = 180 W
\- Efficiency = 52%
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- Integrated ESD protection
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- Excellent thermal stability, low HCI drift
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- Capable of handling 10:1 VSWR @ 28 V, 150 W CW output power
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- Pb-free and RoHS-compliant
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- Package: H-36260-2, bolt-down