PXAC260602FCV1R0XTMA1
数据手册.pdf
Infineon
英飞凌
主动器件
射频金属氧化物半导体场效应RF MOSFET晶体管
Summary of Features:
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- Main: Input matched
Peak: Input and output matching
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- Asymmetric Doherty design
\- Main: P1dB = 15 W Typ
\- Peak: P1dB = 50 W Typ
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- Typical Pulsed CW performance, 2690 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB, Doherty Configuration
\- Output power at P1dB = 50 W
\- Efficiency = 50%
\- Gain = 15 dB
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- Typical two-carrier WCDMA performance, 2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF, Doherty Configuration
\- Output power = 5 W
\- Efficiency = 40%
\- Gain = 15.7 dB
\- IMD = –30 dBc
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- Capable of handling 10:1 VSWR @28 V, 50 W CW output power
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- Integrated ESD protection : Human Body Model, Class 1B per JESD22-A114
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- Low thermal resistance
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- Pb-free and RoHS compliant