PBSS306NZ

NPN 晶体管，NXP一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。### 双极性晶体管，NXP Semiconductors

100 V, 5.1 A NPN low VCEsat BISS transistor General description NPN low VCEsat Breakthrough In Small Signal BISS transistor in a SOT223 SC-73 small Surface-Mounted Device SMD plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board PCB area than for conventional transistors Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches e.g. motors, fans Automotive applications