PTMA080152M V1
数据手册.pdf
Infineon
英飞凌
主动器件
Trans RF MOSFET N-CH 65V 20Pin DSO T/R
Summary of Features:
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- Broadband on-chip matching, 50-ohm input and ~10-ohm output
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- Typical GSM/EDGE performance at 28 V, 920 to 960 MHz
\- 30 dB gain, 34% efficiency @ 8 W output power,
\- 1.5% EVM @ 8W,
\- –61 dBc ACPR @ 400 kHz,
\- –75 dBc ACPR @ 600 kHz
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- Typical CW performance, 940 MHz, 28 V:
\- 20 W P OUT at P1dB, 49% efficiency
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- Integrated ESD protection. Meets HBM Class 1B minimum, per JESD22-A114F
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- Excellent thermal stability, low HCI drift
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- Capable of handling 10:1 VSWR @ 28 V, 20 W CW output power
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- Pb-Free and RoHS-compliant
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- Package: PG-DSO-20-63, surface mount