PUMH4,115

NXP  PUMH4,115  双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 200 hFE, SOT-363

Thanks to Semiconductors, easily integrate NPN digital transistors into digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 200@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.15@0.5mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.