PBSS4320T
数据手册.pdfNXP PBSS4320T 单晶体管 双极, NPN, 20 V, 300 mW, 2 A, 220 hFE
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 20V 集电极连续输出电流ICCollector CurrentIC| 2A 截止频率fTTranstion FrequencyfT| 100MHz 直流电流增益hFEDC Current GainhFE| 220 管压降VCE(sat)Collector-Emitter Saturation Voltage| 70mV~310mV 耗散功率PcPower Dissipation| 1.2W Description & Applications| 20 V NPN low VCEsat BISS transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out LDO. DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package 描述与应用| 20 V NPN低VCEsat(BISS) 特点 •低集电极 - 发射极饱和电压VCE监测 和 相应的低RCEsat的 •高集电极电流能力 •高集电极电流增益 •由于产生的热量减少,提高了效率。 应用 •电源管理应用 •低功率和中功率DC/ DC转换器 •供电线路开关 •电池充电器 •线性电压调节,低电压降 (LDO)。 说明 NPN低VCEsat 在SOT23塑料封装晶体管